Transiently delocalized states enhance hole mobility in organic molecular semiconductors
![Transiently delocalized states enhance hole mobility in organic molecular semiconductors 1 Newsdaily1](http://i0.wp.com/en.newsdailyarabic.com/wp-content/uploads/2022/05/Newsdaily1.png?resize=512%2C470&ssl=1)
Nature Materials, Published online: 14 September 2023; doi:10.1038/s41563-023-01664-4
Dynamic disorder reduces the carrier mobility in organic semiconductors (OSs) to an extent that depends on their specific electronic band structure. Here the authors study the temperature-dependent hole mobility of two structurally similar OSs and find that thermal access to transiently delocalized states enhances hole mobility in C8-DNTT-C8 compared to DNTT.Nature Materials, Published online: 14 September 2023; doi:10.1038/s41563-023-01664-4Dynamic disorder reduces the carrier mobility in organic semiconductors (OSs) to an extent that depends on their specific electronic band structure. Here the authors study the temperature-dependent hole mobility of two structurally similar OSs and find that thermal access to transiently delocalized states enhances hole mobility in C8-DNTT-C8 compared to DNTT. Read More