Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate

Nature Materials, Published online: 12 August 2024; doi:10.1038/s41563-024-01968-z

The synthesis of wafer-scale ultraflat single-crystal hexagonal boron nitride film is realized by strong coupling to a Cu0.8Ni0.2(111)/sapphire wafer, providing a potential method for industry-compatible high-κ dielectric integration in two-dimensional electronics.Nature Materials, Published online: 12 August 2024; doi:10.1038/s41563-024-01968-zThe synthesis of wafer-scale ultraflat single-crystal hexagonal boron nitride film is realized by strong coupling to a Cu0.8Ni0.2(111)/sapphire wafer, providing a potential method for industry-compatible high-κ dielectric integration in two-dimensional electronics. Read More